DOPED MICROCRYSTALLINE SILICON GROWTH BY HIGH-FREQUENCY PLASMAS

The growth of boron- and phosphorus-doped microcrystalline silicon fil ms on glass using plasma enhanced chemical vapor deposition at high rf frequencies was examined for substrate temperatures from room tempera ture to 400 degrees C. Microcrystalline growth was obtained by heavy h ydrogen dilution of silane with phosphine or trimethylboron as the dop ing gas. A maximum conductivity of 8 (Omega cm)(-1) was obtained at a substrate temperature of 180 degrees C for p-type films and 74 (Omega cm)(-1) at 210 degrees C for n-type films.