We present a theoretical evaluation of the application of multiple int
rinsic layers to enhancing the quantum efficiency of high-speed p-i-n
photodetectors. It is shown that the use of multiple layers may lead t
o substantial improvements in the efficiency of detectors operating in
the 20-100-GHz range, provided that the device area is reduced to lim
it the intrinsic capacitance and special care is taken to avoid large
parasitic effects. Potential fabrication schemes are discussed.