EFFECTS OF DRIVE CURRENT UPON DEFECT DISTRIBUTION SCAN FEATURES IN MULTI-LONGITUDINAL MODE SEMICONDUCTOR-LASERS

Defect Distribution (D-2) Scans calculated from semiconductor lasers a t several values of drive current exhibit peaks associated with intern al defects. The peak heights vary linearly with drive current in the r egime far below threshold. Near threshold, the heights exhibit a sharp maximum at a critical current and decline at larger currents. The cri tical current is approximately equal to threshold for defects in the c avity interior, and less than threshold for defects located near one o f the facets. A rate equation model accounts for this behavior and pre dicts values of drive current to obtain optimum peak height and optimu m spatial resolution on internal gain anomalies.