KINETICS OF THERMAL-DECOMPOSITION OF MONOGERMANE

The thermal decomposition of monogermane at 420 - 470 K and 1 - 70 ton on various surfaces under static conditions was studied. The concentr ation of GeH4, from IR absorbtion spectra and the mixture pressure wer e recorded during the reaction. The IR spectrum of Ge, yielding the fo rm of a semiconductor film, was investigated. It was established that the decomposition proceeds by an unbranched-chain mechanism. The autoa ccelerated process caused by the participation of adsorbed intermediat e particles in the chain development was revealed. The inhibition of t he process was realized.