RECONSTRUCTIONS AND GROWTH OF AG ON SI(001)(2X1)

Citation
D. Winau et al., RECONSTRUCTIONS AND GROWTH OF AG ON SI(001)(2X1), Surface science, 303(1-2), 1994, pp. 139-145
Citations number
15
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
303
Issue
1-2
Year of publication
1994
Pages
139 - 145
Database
ISI
SICI code
0039-6028(1994)303:1-2<139:RAGOAO>2.0.ZU;2-I
Abstract
Complex growth and reconstructions of Ag on Si(001)(2 X 1) were studie d by STM, LEED, AES and SEM. We find that Ag is first adsorbed at the silicon SB step edge and preferentially forms dimers on the Si terrace s. At room temperature Ag grows in a pseudo Stranski-Krastanov (SK) mo de. The first layer is not homogeneous and does not cover the substrat e completely. In this layer several different structures coexist (e.g. (2 X 2), c(4 X 2), depending on the Ag induced buckling of the Si dim er rows). During the formation of the inhomogeneous layer, three-dimen sional islands grow with the orientation Ag(111)//Si(001). At a substr ate temperature of 770 K real SK growth is observed and the first laye r is homogeneous. This layer has a (2 X 3) structure. On the top of th is (2 X 3) layer, Ag islands grow with Ag(001)//Si(001).