The polytype transformation in SiC-epitaxial layers grown by the subli
mation ''sandwich method'' have been studied by means of a real color
SEM cathodoluminescence (CL) technique. The variation of polytypes gro
wn on 6H-, 4H-, 15R-, and 21R-polytype substrates is demonstrated. Dif
ferent spectral composition of local CL emission is observed on smooth
and profiled substrate surfaces. The double polytype transformation e
ffect was fixed. The nature of the polytype transformation in SiC epit
axial layers is discussed.