EFFECT OF GROWTH-RATE ON THE SURFACE-MORPHOLOGY OF MBE-GROWN GAAS(001)-(2X4)

Authors
MABOUDIAN R BRESSLERHILL V POND K WANG XS PETROFF PM WEINBERG WH
Citation
R. Maboudian et al., EFFECT OF GROWTH-RATE ON THE SURFACE-MORPHOLOGY OF MBE-GROWN GAAS(001)-(2X4), Surface science, 302(1-2), 1994, pp. 120000269-120000274
Citations number
31
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
302
Issue
1-2
Year of publication
1994
Pages
120000269 - 120000274
Database
ISI
SICI code
0039-6028(1994)302:1-2<120000269:EOGOTS>2.0.ZU;2-G
Abstract
Scanning tunneling microscopy (STM) has been used to investigate the e ffect of the deposition rate on the resulting morphology of GaAs(001)- (2 X 4) surfaces grown by molecular beam epitaxy. Low deposition rates (0.2 mu m/h) are found to create smooth surfaces and lead to anisotro pic islanding with average length ratios of A steps to B steps which a re measurably larger than those produced by standard deposition rates (0.7 mu m/h). For each growth rate, the mean-square-height fluctuation function has been calculated in order to characterize the surface rou ghness observed with STM and the anisotropy associated with the roughn ess.