MONOHYDRIDE STRUCTURES ON CHEMICALLY PREPARED SILICON SURFACES

Chemically prepared, H-terminated silicon surfaces have been character ized by measuring their Si-H stretch infrared absorption spectra. This study focuses on two monohydride-terminated step structures present o n stepped infrared absorption spectra. This study focuses on two monoh ydride-terminated step structures present on stepped Si(111) surfaces with a (112) misorientation: the Si(111)9 degrees[112] and the Si(110) surfaces. Analysis of the position and polarization of the observed v ibrational bands shows that chemical etching promotes the formation of long rows of monohydride-terminated steps, with poor long range order in the direction perpendicular to the step edges. In particular, the chemically prepared H/Si(110) surfaces are atomically rough in one dim ension while exhibiting atomically straight steps in the other.