SECONDARY-ION MASS-SPECTROMETRY ROUND-ROBIN STUDY OF IMPURITY ANALYSIS IN GALLIUM-ARSENIDE USING UNIFORMLY-DOPED STANDARD GALLIUM-ARSENIDE SPECIMENS

This paper reports results of the second SIMS round-robin study on GaA s impurity analysis in which 16 laboratories participated. Three diffe rent types of SIMS instruments, including Cameca IMS-3F or IMS-4F, Ato mika ADIDA-3000 and Hitachi IMA-3, were used for this study. The speci mens were cut from identical multielement-doped GaAs crystals and dist ributed as common standards for the quantitative impurity analyses. Th e interlaboratory deviations in quantitative results based on the comm on standards were found to be 10-20%, except for some low-concentratio n specimens and the results for zinc. This was approximately half of t he corresponding results produced from standard specimens provided by the laboratories themselves. The interlaboratory deviations of relativ e ion intensity between impurity and matrix were < 50% for those labor atories employing instruments of the same type, except for low-concent ration specimens. These results show that quantitative analysis to an accuracy of 50% can be performed without standard specimens by utilizi ng relative sensitivity factors for each type of instrument.