HIGH REFLECTIVITY 1.55 MU-M (AL)GASB ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY/

Authors
LAMBERT B TOUDIC Y ROUILLARD Y BAUDET M GUENAIS B DEVEAUD B VALIENTE I SIMON JC
Citation
B. Lambert et al., HIGH REFLECTIVITY 1.55 MU-M (AL)GASB ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 64(6), 1994, pp. 690-691
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
6
Year of publication
1994
Pages
690 - 691
Database
ISI
SICI code
0003-6951(1994)64:6<690:HR1M(A>2.0.ZU;2-5
Abstract
We report the molecular beam epitaxy growth of (Al)GaSb/AlSb Bragg mir rors around the 1.55 mu m wavelength region. Mirrors with 97% reflecti vity have been achieved by using 10 pairs of (Al)GaSb (1048 Angstrom) and AlSb (1207 Angstrom) quarter wavelength layers. This demonstrates the capability of the antimonide system to obtain efficient Bragg mirr ors grown on GaAs substrates.