SELF-ORGANIZING GROWTH OF ERBIUM ARSENIDE QUANTUM DOTS AND WIRES IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY

Authors
SINGER KE RUTTER P PEAKER AR WRIGHT AC
Citation
Ke. Singer et al., SELF-ORGANIZING GROWTH OF ERBIUM ARSENIDE QUANTUM DOTS AND WIRES IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 64(6), 1994, pp. 707-709
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
6
Year of publication
1994
Pages
707 - 709
Database
ISI
SICI code
0003-6951(1994)64:6<707:SGOEAQ>2.0.ZU;2-P
Abstract
Gallium arsenide doped with erbium has been grown by molecular beam ep itaxy. At growth temperatures in the range 540-605 degrees C, and with arsenic to gallium flux ratios of 2 and more, the erbium forms unifor m crystalline microprecipitates of ErAs when the concentration exceeds 7 x 10(17) cm(-3). The diameter can be varied in the range 11-21 Angs trom by altering the growth temperature. Reducing the arsenic to galli um flux ratio to close to stoichiometry changes the growth mode to one yielding quantum wires aligned in the growth direction. Subtle change s in growth conditions lead to bifurcated structures, which we refer t o as quantum trees.