LOW-POWER ALL-OPTICAL BISTABILITY IN INGAAS-ALINAS SUPERLATTICES - DEMONSTRATION OF A WIRELESS SELF-ELECTRO-OPTICAL EFFECT DEVICE OPERATINGAT 1.5 MU-M

Authors
COUTURIER J VOISIN P HARMAND JC
Citation
J. Couturier et al., LOW-POWER ALL-OPTICAL BISTABILITY IN INGAAS-ALINAS SUPERLATTICES - DEMONSTRATION OF A WIRELESS SELF-ELECTRO-OPTICAL EFFECT DEVICE OPERATINGAT 1.5 MU-M, Applied physics letters, 64(6), 1994, pp. 742-744
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
6
Year of publication
1994
Pages
742 - 744
Database
ISI
SICI code
0003-6951(1994)64:6<742:LABIIS>2.0.ZU;2-U
Abstract
We report the observation of optical transmission bistability at low t emperature in unprocessed InGaAs-AIInAs superlattice p-i-n structures. Bistability results, in analogy with the self-electro-optical effect device, from a positive feedback mechanism due to the interplay betwee n Wannier-Stark effect, built-in field, and screening by photocarriers .