ANALYSIS OF TEMPERATURE SENSITIVITY IN SEMICONDUCTOR-LASERS USING GAIN AND SPONTANEOUS EMISSION MEASUREMENTS

A consistent method to characterize the temperature dependence of bulk InGaAsP semiconductor laser diodes is presented. Independent measurem ents of the gain and spontaneous emission spectra are conducted, and t he spectra are calibrated using their fundamental relationship. This p rocedure will provide a unique approach to extract precise values for laser diode parameters such as quasi-Fermi level separation, peak moda l gain, and total loss. The radiative and nonradiative current densiti es can then be calculated as a function of temperature and injection c urrent. By comparing the measured data with a theoretical model, the c arrier density is calculated. Important phenomena contributing to the strong temperature dependence of long-wavelength bulk InGaAsP/InP lase rs are highlighted. (C) 1997 American Institute of Physics.