W. Fang et al., ANALYSIS OF TEMPERATURE SENSITIVITY IN SEMICONDUCTOR-LASERS USING GAIN AND SPONTANEOUS EMISSION MEASUREMENTS, Applied physics letters, 70(7), 1997, pp. 796-798
A consistent method to characterize the temperature dependence of bulk
InGaAsP semiconductor laser diodes is presented. Independent measurem
ents of the gain and spontaneous emission spectra are conducted, and t
he spectra are calibrated using their fundamental relationship. This p
rocedure will provide a unique approach to extract precise values for
laser diode parameters such as quasi-Fermi level separation, peak moda
l gain, and total loss. The radiative and nonradiative current densiti
es can then be calculated as a function of temperature and injection c
urrent. By comparing the measured data with a theoretical model, the c
arrier density is calculated. Important phenomena contributing to the
strong temperature dependence of long-wavelength bulk InGaAsP/InP lase
rs are highlighted. (C) 1997 American Institute of Physics.