GROWTH TEMPERATURE-DEPENDENCE OF THE SI(001) SIO2 INTERFACE WIDTH/

The growth temperature dependence of the thin thermally oxidized Si(00 1)/SiO2 interface width was studied using synchrotron x-ray diffractio n. Nine samples with oxide thickness of about 100 Angstrom were studie d, with growth temperatures ranging from 800 to 1200 degrees C. The ox ides were prepared by rapid thermal oxidation. We found that interfaci al roughness decreases linearly with increasing growth temperature, wi th a measured interface width of 2.84 Angstrom for the sample grown at 800 degrees C, and 1.76 Angstrom when grown at 1200 degrees C.