INALAS INGAAS METAL-SEMICONDUCTOR-METAL PHOTODIODES HETEROEPITAXIALLYGROWN ON SI SUBSTRATES/

To study performance and reproducibility of photodiodes (PDs) on Si in the long-wavelength region, InAlAs/InGaAs metal-semiconductor-metal P Ds were fabricated on high-quality heteroepitaxial InP layers on Si su bstrates. A dark current of 0.5-2x10(-8) A and a responsivity of 0.05- 0.15 A/W were reproducibly obtained, at least at one of the +/-5 V bia s voltages. These dark currents and responsivity are similar to those of PDs with the same structure fabricated on InP substrates. The PDs o n Si have pulse responses with full widths at half-maximum of 150-600 ps.