GAS AND ADSORBATE EXCITATION PATHWAYS IN SYNCHROTRON-RADIATION EXCITED SI GROWTH USING DISILANE

We studied reaction kinetics in synchrotron radiation excited chemical vapor deposition of Si using disilane. It was found that the growth r ate depends on temperature in the irradiated region but not in the non irradiated region. Growth in the irradiated region occurs as a result of photolysis of disilane molecules weakly trapped on the surface foll owed by the formation of a hydrogenated Si network. On the other hand, in the nonirradiated region, growth occurs as a result of layer-by-la yer sticking and the elimination of surface hydrogen by a fragment spe cies generated by photolysis of gas-phase disilane. The reaction model is consistent with properties of the grown Si film.