EFFECT OF ZINC IMPURITY-INDUCED DISORDERING ON THE REFRACTIVE-INDEX OF GAAS ALGAAS MULTIQUANTUM WELLS/

We report on the variation of the refractive index of a GaAs/AlGaAs mu ltiquantum well of well width 6.5 nm and barrier width 19 nm, introduc ed by zinc impurity-induced disordering. We employ a structure consist ing of several uncoupled, multiquantum well ridge waveguides with tape red disordering across the transverse direction. The refractive index changes have been deduced as a function of the interdiffusion length o f Ga/Al by the use of an interference technique. We measured a maximum index change of 0.083 and 0.062 for significant disordering (L(d)=6.6 nm) at 35 and 100 meV below the band edge of the undisordered multiqu antum well, respectively.