PHOTOLUMINESCENCE STUDY OF STRONG INTERDIFFUSION IN CDTE CDMNTE QUANTUM-WELLS INDUCED BY RAPID THERMAL ANNEALING/

Authors
TONNIES D BACHER G FORCHEL A WAAG A LANDWEHR G
Citation
D. Tonnies et al., PHOTOLUMINESCENCE STUDY OF STRONG INTERDIFFUSION IN CDTE CDMNTE QUANTUM-WELLS INDUCED BY RAPID THERMAL ANNEALING/, Applied physics letters, 64(6), 1994, pp. 766-768
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
6
Year of publication
1994
Pages
766 - 768
Database
ISI
SICI code
0003-6951(1994)64:6<766:PSOSII>2.0.ZU;2-N
Abstract
Thermally induced interdiffusion in CdTe/CdMnTe quantum wells was inve stigated by photoluminescence spectroscopy. The single quantum well st ructures were grown by molecular beam epitaxy annealed by rapid therma l annealing for 1 min at temperatures between 380 and 520 degrees C. A blue shift close to the barrier energy was observed indicating an alm ost perfect interdiffusion between the well and the barrier material. We derive an activation energy of 2.8 eV for the interdiffusion proces s from a Fickian diffusion model applied to our experiments.