RHEED REFLEX PROFILE ANALYSIS AND PHASE-LOCKED EPITAXY OF ZNSE ON (001)-ORIENTED GAAS

Authors
GRIESCHE J HOFFMANN N RABE M JACOBS K
Citation
J. Griesche et al., RHEED REFLEX PROFILE ANALYSIS AND PHASE-LOCKED EPITAXY OF ZNSE ON (001)-ORIENTED GAAS, Applied surface science, 75, 1994, pp. 64-69
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
75
Year of publication
1994
Pages
64 - 69
Database
ISI
SICI code
0169-4332(1994)75:<64:RRPAAP>2.0.ZU;2-Q
Abstract
ZnSe layers have been grown by MBE in both the conventional and the ph ase-locked epitaxy (PLE) mode. RHEED patterns have been taken at diffe rent stages during growth interruptions. The intensity profile along t he 00 rod has been analyzed with respect to the surface morphology. Du ring growth interruptions, the surface is smoothed by two processes wi th different time constants. In the PLE mode, surprisingly, the presen t results indicate that the number of RHEED oscillation periods observ ed does not coincide with the number of monolayers obtained.