EXCITON SPECTRAL SPLITTING NEAR ROOM-TEMPERATURE FROM HIGH-CONTRAST SEMICONDUCTOR MICROCAVITIES

Authors
GRAHAM LA DENG Q DEPPE DG HUFFAKER DL
Citation
La. Graham et al., EXCITON SPECTRAL SPLITTING NEAR ROOM-TEMPERATURE FROM HIGH-CONTRAST SEMICONDUCTOR MICROCAVITIES, Applied physics letters, 70(7), 1997, pp. 814-816
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
7
Year of publication
1997
Pages
814 - 816
Database
ISI
SICI code
0003-6951(1997)70:7<814:ESSNRF>2.0.ZU;2-F
Abstract
Spectral splitting due to the exciton response of a three InGaAs quant um well active region placed in various high contrast semiconductor mi crocavities is observed near room temperature. The planar microcavitie s consist of one-wavelength thick cavity spacers surrounded by AlGaAs/ CaAs along with high contrast distributed Bragg reflectors formed from AlxOy/GaAs and MgF/ZnSe. Microcavities having different loss rates ar e characterized over a range of temperatures using reflectance, transm ission, and photoluminescence. (C) 1997 American Institute of Physics.