DISSIPATION OF CONTACT-ELECTRIFIED CHARGE ON THIN SI-OXIDE STUDIED BYATOMIC-FORCE MICROSCOPY

A microscopic contact electrification on a thin silicon oxide was done by an atomic force microscope (AFM) with a biased conductive cantilev er coated with Au/Cr. As a result, a good reproducibility was obtained for the first time, and the sign of deposited charges was controlled successfully by the sign of bias voltage V-c. Negative charges were de posited more easily than positive charges, and the number of deposited charges also seems to be controllable. After the controlled contact e lectrification, the charge dissipation on the thin silicon oxide was i nvestigated microscopically by a non-contact DC mode detection of the electrostatic force with the AFM biased by the voltage V-s. As a resul t, some differences were found between the charge dissipations of posi tive and negative charges and under the repulsive and attractive force measurements.