IN-SITU CHARACTERIZATION OF ALE GROWTH BY REAGENT PULSE DELAY TIMES IN A FLOW-TYPE REACTOR

Citation
J. Aarik et al., IN-SITU CHARACTERIZATION OF ALE GROWTH BY REAGENT PULSE DELAY TIMES IN A FLOW-TYPE REACTOR, Applied surface science, 75, 1994, pp. 180-184
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
75
Year of publication
1994
Pages
180 - 184
Database
ISI
SICI code
0169-4332(1994)75:<180:ICOAGB>2.0.ZU;2-R
Abstract
Time delays of reagent gas pulses which occur in the flow-type atomic layer epitaxy reactor were studied. It was shown that the time delays depend on the source temperature, reactor geometry and reactor tempera ture and characterize the growth process as well as the growing film. First of all, the surface density of adsorbed precursor molecules and the constituent element mole ratio can be obtained from time delay mea surements.