J. Aarik et al., IN-SITU CHARACTERIZATION OF ALE GROWTH BY REAGENT PULSE DELAY TIMES IN A FLOW-TYPE REACTOR, Applied surface science, 75, 1994, pp. 180-184
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Time delays of reagent gas pulses which occur in the flow-type atomic
layer epitaxy reactor were studied. It was shown that the time delays
depend on the source temperature, reactor geometry and reactor tempera
ture and characterize the growth process as well as the growing film.
First of all, the surface density of adsorbed precursor molecules and
the constituent element mole ratio can be obtained from time delay mea
surements.