TAILORED HETEROINTERFACE FORMATION IN INGAAS INP SUPERLATTICES BY GAS-SOURCE MIGRATION-ENHANCED EPITAXY/

InGaAs/InP short period superlattices (SPSLs) with different interface atomic arrangements were grown by gas source migration-enhanced epita xy (GSMEE) on (001)InP substrates. The local structure found around in terfaces was investigated by PK-edge X-ray absorption fine structure ( XAFS) using synchrotron radiation (SR), and by highly sensitive Raman scattering spectroscopy. Persistent reflection high-energy electron di ffraction (RHEED) oscillations reveal that layer-by-layer nucleation c an take place even during the growth of heterointerfaces by precise co ntrol of migration-enhanced epitaxy (MEE) sequences. The RHEED intensi ty traces of InGaAs/InP SPSLs without special characteristic shapes at the heterointerfaces were observed for the first time. XAFS analysis shows that the first nearest neighbors to P in the sample with InGa-P interfaces are In and Ga and that the first nearest neighbor in the sa mple with In-As interfaces is In. No clear GaP longitudinal optical (L O) phonon line is observed in the Raman scattering spectrum for SPSL w ith In-As interfaces, while a sharp and strong GaP LO phonon line is d etected in SPSL with InGa-P interfaces.