THE CHARACTERISTICS OF HIGH-RESISTANCE LAYERS PRODUCED IN N-GAAS USING MEV-NITROGEN IMPLANTATION FOR 3-DIMENSIONAL STRUCTURING

Authors
MIAO J TIGINYANU IM HARTNAGEL HL IRMER G MONECKE J WEISS BL
Citation
J. Miao et al., THE CHARACTERISTICS OF HIGH-RESISTANCE LAYERS PRODUCED IN N-GAAS USING MEV-NITROGEN IMPLANTATION FOR 3-DIMENSIONAL STRUCTURING, Applied physics letters, 70(7), 1997, pp. 847-849
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
7
Year of publication
1997
Pages
847 - 849
Database
ISI
SICI code
0003-6951(1997)70:7<847:TCOHLP>2.0.ZU;2-Y
Abstract
The radiation damage introduced in n-GaAs by 4-MeV N+ implantation at a dose of 1x10(15) cm(-)2 has been analyzed using micro-Raman spectros copy. Implantation followed by annealing at 600 degrees C was found to produce a strongly compensated near-surface layer possessing a high c rystalline quality. At the same time a pronounced disorder was found u nderneath the high-resistance layer which enables the fabrication of 2 .5-mu m thick free-standing membranes using selective electrochemical etching techniques. (C) 1997 American Institute of Physics.