Ca. Dimitriadis et al., LOW-FREQUENCY NOISE OF THE LEAKAGE CURRENT IN UNDOPED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 70(7), 1997, pp. 880-882
The origin of the leakage current in low-pressure chemically vapor dep
osited polycrystalline silicon (polysilicon) thin-film transistors is
investigated by low-frequency noise measurements. The leakage current
depends on the structure of the polysilicon layer. When the grain size
is relatively large (about 120 nm), the noise spectra show a purr 1/f
behavior caused by carrier fluctuation within the space charge region
of the drain junction. For smaller grain size (about 50 nm), the obse
rved 1/f(1.5) spectra are attributed to thermal noise of the bulk poly
silicon him. (C) 1997 American Institute of Physics.