HIGH-RESISTANCE LAYERS IN N-TYPE 4H-SILICON CARBIDE BY HYDROGEN-ION IMPLANTATION

The effect of hydrogen ion implantation damage on the resistivity of n -type 4H-silicon carbide is investigated. The variation of resistivity as a function of measurement temperature and postimplant annealing te mperature is studied. Calculated resistivities obtained from resistanc e measurements are as high as 8x10(6) Omega cm when resistances are me asured at room temperature. When measured at 250 degrees C, the resist ivity of the implanted layer is 1x10(4) Omega cm. The resistivity is a lmost constant for annealings up to 1000 degrees C. The high-resistanc e behavior is believed to be related to implantation damage caused by 350 keV H+ implantation. The results of this study can be used to obta in high-resistance regions for device isolation. (C) 1997 American Ins titute of Physics.