ELLIPSOMETRIC CHARACTERIZATION OF AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS DEPOSITED USING A SINGLE-WAFER REACTOR

The optical functions of amorphous and polycrystalline silicon thin fi lms deposited on single oxidized silicon substrates by chemical vapor deposition in a wide range of deposition temperatures have been determ ined using spectroscopic ellipsometry. The data analysis is performed by direct inversion of the experimental spectra, therefore, obtaining results independent of any film modeling. The optical results indicate that the film structure changes as the deposition temperature increas es from amorphous to polycrystalline with different grain size and dis tribution. (C) 1997 American Institute of Physics.