TIME EVOLUTION OF CONTACT-ELECTRIFIED ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE INVESTIGATED USING NONCONTACT ATOMIC-FORCE MICROSCOPE

Deposition and observation of contact-electrified electrons on thin si licon oxide surface were performed separately and successfully investi gated by the noncontact DC mode measurement of the induced electrostat ic force with an atomic force microscope (AFM). It was found that the dissipation of the contact-electrified electrons had three stages with respect to time, which correspond to a stable state, an unstable stat e and a trapped state at the charge trap site.