HOLE GENERATION WITHOUT ANNEALING IN HIGH-DOSE BORON-IMPLANTED SILICON - HEAVY DOPING BY B-12 ICOSAHEDRON AS A DOUBLE ACCEPTOR

Authors
MIZUSHIMA I MURAKOSHI A WATANABE M YOSHIKI M HOTTA M KASHIWAGI M
Citation
I. Mizushima et al., HOLE GENERATION WITHOUT ANNEALING IN HIGH-DOSE BORON-IMPLANTED SILICON - HEAVY DOPING BY B-12 ICOSAHEDRON AS A DOUBLE ACCEPTOR, JPN J A P 1, 33(1B), 1994, pp. 404-407
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
33
Issue
1B
Year of publication
1994
Pages
404 - 407
Database
ISI
SICI code
Abstract
A high hole concentration region of about 1 x 10(21) cm(-3) was genera ted without any post-annealing by the implantation of high doses of bo ron into silicon substrates. X-ray photoelectron spectroscopy (XPS) me asurement and Fourier transform IR spectroscopy (FTIR) absorption spec tra revealed that B-12 icosahedra were created in as-implanted samples . A new model of the generation of holes is proposed in which B-12 ico sahedron acts as a double acceptor.