HIGH-RELIABILITY LITHOGRAPHY PERFORMED BY ULTRASONIC AND SURFACTANT-ADDED DEVELOPING SYSTEM

Formation of high-precision fine resist patterns has been achieved by an effective removal of dissolved resist polymers, that is, the reacti on products of the development process. Also, it has been found that t he reaction products give rise to the degradation of the resist contra st, resist sensitivity, and process margins. In order to remove the re action products, two techniques have been employed, namely physical me thod of development with agitation (ultrasonic waves or with a stirrer ) and chemical method of adding surfactant to the developer. By combin ing physical and chemical methods, the dissolved polymers have been ef fectively removed, thus allowing the resist to reveal its inherent pat terning pertormance.