EFFECT OF OXYGEN RADICALS FOR EPITAXIAL-GROWTH OF AL2O3 ON SI

Epitaxial Al2O3 films were grown on Si substrates by metal-organic mol ecular beam epitaxy (MOMBE) using oxygen radicals excited with remote rf plasma and trimethylaluminum (TMA) as source gases. The epitaxial t emperature of Al2O3 on Si decreased from 800 degrees C to 700 degrees C using this method. The growth rate of the Al2O3 films increased 1.4- 1.6 times at excitation rf power of 400 W, compared with that without rf plasma excitation. The Auger electron spectroscopy (AES) measuremen t showed that the carbon contamination in the Al2O3 film was removed b y the oxygen radicals during the growth. The flatness of the grown Al2 O3 surface was improved using oxygen radicals.