IN-SITU CHAMBER CLEANING USING HALOGENATED-GAS PLASMAS EVALUATED BY PLASMA-PARAMETER EXTRACTION

Citation
K. Ino et al., IN-SITU CHAMBER CLEANING USING HALOGENATED-GAS PLASMAS EVALUATED BY PLASMA-PARAMETER EXTRACTION, JPN J A P 1, 33(1B), 1994, pp. 505-509
Citations number
15
Categorie Soggetti
Physics, Applied
Volume
33
Issue
1B
Year of publication
1994
Pages
505 - 509
Database
ISI
SICI code
Abstract
We have demonstrated that high-efficiency in situ chamber cleaning wit h high gas flow rate is possible for SiO2 reactive-ion-etching chamber s by use of NF3 plasma. The plasma of NF3 gas, which has a low bond en ergy, can generate a high density of ions and radicals with low kineti c energy. The cleaning efficiency of several halogenated-gas plasmas h as been evaluated based on extracted-plasma-parameter analysis. In thi s analysis important plasma parameters, such as ion energy and ion flu x density, could be extracted from a simple rf waveform analysis at th e excitation electrode. The accuracy of this technique has been confir med with a newly developed rf-plasma direct probing method. Furthermor e, the waveform of the rf-excited plasma potential has been directly m easured by the rf-plasma probing method, which has clarified the relat ionship between the plasma potential and the rf electrode voltage.