LATCH-UP SUPPRESSED INSULATED GATE BIPOLAR-TRANSISTOR BY THE DEEP P(-IMPLANTATION UNDER THE N(+) SOURCE() ION)

A novel insulated gate bipolar transistor (IGBT) structure, which empl oys the self aligned deep p(+) buried region enveloping all the area u nder the n(+) source, is proposed and verified-by SUPREM IV and PISCES -IIB simulation. The simulation results show that the latch-up current is found to increase up to about 10 times compared with the conventio nal structure when the implantation dose of the p(+) buried region and the p-body are 1x10(15) cm(-2) and 1 x 10(14) Cm-2, respectively. The variation of the threshold voltage is within 0.l V although the impla ntation dose of the p(+) buried region increases from 1 x 10(14) cm(-2 ) to 1 x 10(15) cm(-2).