Bh. Lee et al., LATCH-UP SUPPRESSED INSULATED GATE BIPOLAR-TRANSISTOR BY THE DEEP P(-IMPLANTATION UNDER THE N(+) SOURCE() ION), JPN J A P 1, 33(1B), 1994, pp. 563-566
A novel insulated gate bipolar transistor (IGBT) structure, which empl
oys the self aligned deep p(+) buried region enveloping all the area u
nder the n(+) source, is proposed and verified-by SUPREM IV and PISCES
-IIB simulation. The simulation results show that the latch-up current
is found to increase up to about 10 times compared with the conventio
nal structure when the implantation dose of the p(+) buried region and
the p-body are 1x10(15) cm(-2) and 1 x 10(14) Cm-2, respectively. The
variation of the threshold voltage is within 0.l V although the impla
ntation dose of the p(+) buried region increases from 1 x 10(14) cm(-2
) to 1 x 10(15) cm(-2).