DEVICE SIMULATION WITH QUASI 3-DIMENSIONAL TEMPERATURE ANALYSIS FOR SHORT-CHANNEL POLY-SI THIN-FILM-TRANSISTOR

A new poly-Si thin-film transistor (TFT) device simulator for quasi th ree-dimensional temperature analysis has been developed. In this simul ator, the influences of the grain boundaries are incorporated into the mobility model when the basic semiconductor equations are solved. Fur thermore, we have taken into account the self-heating effect owing to a small thermal conductivity of the insulating substrate using quasi t hree-dimensional temperature analysis. We could accurately analyse the temperature rise effect and the avalanche short-channel effect in the short-channel poly-Si TFT.