FABRICATION OF SELF-ALIGNED ALUMINUM GATE POLYSILICON THIN-FILM TRANSISTORS USING LOW-TEMPERATURE CRYSTALLIZATION PROCESS

The performance of scanning driver circuits fabricated with self-align ed aluminum gate polysilicon thin-film transistors (TFT's) is demonstr ated. After the gate electrode patterning, the fabrication process tem perature is kept below 400 degrees C to enable the use of aluminum gat e electrodes. The low-temperature crystallization phenomenon, which oc curs when protons are implanted simultaneously with boron or phosphoru s dopants, is employed to eliminate the 600 degrees C activation-annea ling process. A maximum clock frequency of about 2.0 MHz is achieved w hen the driver operating voltage is 24 V and the TFT channel length is 12 mu m.