IMPROVED IV-CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS WITHNOVEL DUAL-BUFFER DRAIN STRUCTURE

ON/OFF current ratio of poly-Si TFTs has been improved by using a nove l structure called the dual-buff er drain (DBD). The new DBD TFT not o nly reduces the anomalous off-current, but also maintains a high on-cu rrent. It mainly combines features of the double-gate and the field-in duced drain structures, so that owns advantages of low electric field near the drain junction and good drain junction characteristics. Furth ermore, it will be shown that the DBD TFT is superior in off-current s tability to the FID TFT. Finally, we will discuss high voltage operati on for the DBD TFT.