EFFECTS OF SUBSTRATE MISORIENTATION ON IMPROVEMENT OF ELECTRICAL-PROPERTIES IN ZN-DOPED INALP ALLOYS

High-concentration, low-resistivity p-type Zn-doped InAlP alloy layers were achieved using metalorganic chemical vapor deposition (MOCVD) an d off-axis substrates. The highest net acceptor concentration (N-A-N-D =1.3X10(18)cm(-3)), obtained using an off-axis substrate, is one order of magnitude higher than the previously reported maximum value. Subst rate misorientation was found to improve the Zn electrical activity in addition to the enhancement of Zn incorporation efficiency. Electrica l resistivities as low as 0.68 Omega(.)cm were obtained. High device p erformance was obtained for 630 nm band laser diodes (LDs) and green l ight emitting diodes (LEDs) fabricated with the highly Zn-doped InAlP as the p-type cladding layers.