COMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKER

By fast change of the As-2 flux using a high temperature valved cracke r, we have demonstrated the growth of strained InxGa1-xAs quantum well s with different compositions. The modulation of composition is due to the change in incorporation rates of the group III atoms under differ ent As-2 fluxes. Photoluminescence (PL) emission from the quantum well s clearly indicates the change in composition. A change of In composit ion from 20.6% to 8.5%, has been achieved by changing the V/III beam-e quivalent-pressure (BEP) ratio from 11.7 to 3.9. By this technique of composition modulation, we have fabricated strained InxGa1-xAs/GaAs si ngle quantum well lasers with different emission wavelengths.