0.05-MU-M-GATE INALAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR AND REDUCTION OF ITS SHORT-CHANNEL EFFECTS/

In this paper, we discusse the advantages of thinning the channel on s hort-channel effects for lattice-matched InAlAs/InGaAs high electron m obility transistors (HEMTs) with sub-0.1-mu m-long gates with regard t o the performance of a 0.05-mu m-gate device. To fabricate a sub-0.1-m u m gate, the opening shape of the gate-footprint is controlled by usi ng a bilayer dielectric film system and RIE side etching. The device s hows a current gain cutoff frequency of 300 GHz and g(m)/g(d) ratio of 15. Thinning the channel and the barrier down to 100 Angstrom improve s carrier confinement and subthreshold characteristics and is indispen sable for reducing the short-channel effects in the sub-0.1-mu m-gate- length region.