A new optical RAM-bus (GRAM-bus) memory system has been proposed. The
GRAM-bus memory has a number of optical interconnections to connect ma
ny memory chips. Data transfer using the guided optical interconnectio
ns is performed through the optical coupling flip-flop (OC-FF) circuit
of the optical coupling sense amplifiers. The ORAM-bus memory test ch
ips were fabricated using 2 mu m complementary metal-oxide-semiconduct
or (CMOS) technology. The light-emitting diodes (LEDs) were successful
ly bonded onto the silicon test chips using the newly developed microb
onding technology. The optical writing operation for GRAM-bus memory w
as demonstrated using the test chip.