Laser-emission surface-normal optical devices with a vertical cavity a
re expected to be key devices for optical interconnections. Thermal ch
aracteristics improvement is necessary for, a large-scale-integrated t
wo-dimensional array which increases the number of optical interconnec
tions. To optimize the device structures to obtain good thermal charac
teristics, the temperature rise of distributed Bragg reflectors and an
active layer must be known. Here, we report on the first evaluation o
f temperature rise in both regions, and it is found that the temperatu
re rise is small for a compact double-mesa structure which allows a si
ngle lateral-mode oscillation. In addition, we measured the thermal cr
osstalk between the above compact devices, and it is found that the th
ermal crosstalk between one-dimensional array devices is small enough
when each device operates at a few milliamperes.