DESIGN AND CHARACTERIZATION OF IN0.2GA0.8AS MQW VERTICAL-CAVITY SURFACE-EMITTING LASERS

In this work, the device design, material characterization, and perfor mance of optimized vertical-cavity surface-emitting lasers (VCSEL's) w ill be presented. The basic design goal was to increase the output pow er of the lasers without drastically increasing the low threshold curr ent reported in earlier devices. The material characterization was per formed by measuring in-plane lasers and broad-area VCSELs made from th e same material as the small VCSEL's. For 10 mu m square devices, outp uts over 3 mW, device operation over 100 degrees C, 6% wall-plug effic iency, threshold voltages under 3 V, and threshold currents under 2 mA are reported.