An n-PbTe epilayer was grown on a p-Si substrate by the hot wall epita
xy (HWE) technique, so an n-PbTe/p-Si heterojunction was produced. The
n the heterojunction was utilized to make a mid-infrared detector for
the first time, to our knowledge. A detectivity of D = 1.6 x 10(9) cm
Hz(1/2) W-1 could be achieved.