RESISTIVITY AND MAGNETORESISTANCE-ELASTORESISTANCE OF POLYCRYSTALLINENI-SI THIN-FILMS

The temperature dependence of the resistivity and magnetoresistance-el astoresistance of r.f.-sputtered Ni-Si thin films with variable silico n content (0-24 at.%) (determined by Rutherford backscattering spectro scopy) annealed to 300 degrees C was measured. The films, investigated by X-ray diffraction and transmission electron microscopy, exhibit a polycrystalline structure of the Ni f.c.c. type with a disorder degree which increases with the silicon content and a metallic-type conducti on mechanism. The ferromagnetic properties of Ni are still preserved i n the Ni-Si thin films up to 8.8 at.% silicon content.