A PROCEDURE FOR INVESTIGATING THE NEAR-SURFACE LAYERS OF SILICON SINGLE-CRYSTALS BY THE METHOD OF 3-CRYTSTAL X-RAY-DIFFRACTOMETRY

Authors
LOMOV AA OSIPOV AF SIROCHENKO VP
Citation
Aa. Lomov et al., A PROCEDURE FOR INVESTIGATING THE NEAR-SURFACE LAYERS OF SILICON SINGLE-CRYSTALS BY THE METHOD OF 3-CRYTSTAL X-RAY-DIFFRACTOMETRY, Industrial laboratory, 59(2), 1993, pp. 173-177
Citations number
14
Categorie Soggetti
Material Science","Metallurgy & Mining
Journal title
Industrial laboratory → ACNP
ISSN journal
00198447
Volume
59
Issue
2
Year of publication
1993
Pages
173 - 177
Database
ISI
SICI code
0019-8447(1993)59:2<173:APFITN>2.0.ZU;2-B