LASING ACTION OF GA0.67IN0.33AS GAINASP/INP TENSILE-STRAINED QUANTUM-BOX LASER/

Authors
HIRAYAMA H MATSUNAGA K ASADA M SUEMATSU Y
Citation
H. Hirayama et al., LASING ACTION OF GA0.67IN0.33AS GAINASP/INP TENSILE-STRAINED QUANTUM-BOX LASER/, Electronics Letters, 30(2), 1994, pp. 142-143
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
2
Year of publication
1994
Pages
142 - 143
Database
ISI
SICI code
0013-5194(1994)30:2<142:LAOGGT>2.0.ZU;2-3
Abstract
The lasing action of a Ga0.67In0.33As/GaInAsP/InP quantum-box (QB) las er with single-layer tensile-strained (TS)-QB active region is demonst rated for the first time. The fabricated QB is 30nm in diameter and 12 nm thick with a period of 70nm. The sample was fabricated by using two -step MOVPE growth, electron-beam-exposure (EBX) direct writing, and w et-chemical etching processes. The threshold current density was 7.6KA /cm(2) at 77K with pulse current injection.