VERY-LOW LOSS EXTENDED-CAVITY GAAS ALGAAS LASERS MADE BY IMPURITY-FREE VACANCY DIFFUSION/

Authors
GONTIJO I KRAUSS T DELARUE RM ROBERTS JS MARSH JH
Citation
I. Gontijo et al., VERY-LOW LOSS EXTENDED-CAVITY GAAS ALGAAS LASERS MADE BY IMPURITY-FREE VACANCY DIFFUSION/, Electronics Letters, 30(2), 1994, pp. 145-146
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
2
Year of publication
1994
Pages
145 - 146
Database
ISI
SICI code
0013-5194(1994)30:2<145:VLEGAL>2.0.ZU;2-Y
Abstract
Very low loss extended cavity lasers have been fabricated using the im purity-free vacancy diffusion technique. The average loss, obtained fr om the slope of measured loss as a function of the extended cavity len gth, was 1OdB/cm for extended cavities annealed at 900 degrees C for 3 0s. The lowest loss of 3.6dB/cm was obtained from a device annealed at 950 degrees C for 30s.