DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS USING ALGAINP GAAS/GAINP/

Authors
YOW HK LEE TW HOUSTON PA LEE HY BUTTON CC ROBERTS JS
Citation
Hk. Yow et al., DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS USING ALGAINP GAAS/GAINP/, Electronics Letters, 30(2), 1994, pp. 167-169
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
2
Year of publication
1994
Pages
167 - 169
Database
ISI
SICI code
0013-5194(1994)30:2<167:DBUAG>2.0.ZU;2-5
Abstract
The first Al0.18Ga0.34In0.48P/GaAs/Ga0.52In0.48P double heterojunction bipolar transistors grow by metal organic vapour phase epitaxy are re ported. They exhibit a current gain of 110 at high collector-emitter v oltage and a small offset voltage of 30mV. The addition of Al to the e mitter has not adversely affected the quality of the emitter-base inte rface.