INFRARED HOT-ELECTRON PHOTOTRANSISTOR

Authors
RYZHII V
Citation
V. Ryzhii, INFRARED HOT-ELECTRON PHOTOTRANSISTOR, JPN J A P 1, 33(1A), 1994, pp. 78-82
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
33
Issue
1A
Year of publication
1994
Pages
78 - 82
Database
ISI
SICI code
Abstract
A hot-electron phototransistor (HEPT) is proposed and discussed. The H EPT utilizes the intraband absorption of radiation in the base. This t wo-terminal device can operate as a photodetector for the infrared reg ion of spectrum. Photoelectric performances of the HEPT are evaluated using an analytical model.