Pb1-xSrxTe films were prepared by hot-wall epitaxy on BaF2(111) substr
ates. X-ray diffraction analysis, optical transmission measurement, Ha
ll measurement and electron-probe micro-analysis (EPMA) were performed
for the films. It was observed that the increasing rate of the lattic
e constant of the Pb1-xSrxTe films with the SrTe content was considera
bly larger than that estimated from Vegard's law. Pb1-xSrxTe/PbTe doub
le-heterostructure (DH) and multiple-quantum-well (MQW) lasers were al
so prepared for the first time by hot-wall epitaxy. Pulsed laser opera
tions were obtained up to 227 K (4.1 mu m) for the DH laser and up to
220 K (3.5 mu m) for the M QW laser. Large output energy shifts due to
misfit strain in the active layer were observed.